Semiconductor memory devices and methods of operating semiconductor memory devices

ABSTRACT

A semiconductor memory device includes a memory cell array, an error correction code (ECC) circuit, a fault address register, a scrubbing control circuit and a control logic circuit. The memory cell array includes memory cell rows. The scrubbing control circuit generates scrubbing addresses based on refresh operations performed on the memory cell array. The control logic circuit controls the ECC circuit such that the ECC circuit performs an error detection operation on a plurality of sub-pages in a first memory cell row to count a number of error occurrences, and determines whether to correct a codeword in which an error is detected based on the number of error occurrences. An uncorrected or corrected codeword is written back, and a row address of the first memory cell row may be stored in the fault address register as a row fault address based on the number of error occurrences.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of, and claims priority under35 U.S.C. § 120 to, U.S. patent application Ser. No. 17/245,075, filedApr. 30, 2021, which in turn claims the benefit of priority under 35U.S.C. § 119 to Korean Patent Application No. 10-2020-0122514, filed onSep. 22, 2020, in the Korean Intellectual Property Office, and theentire contents of each above-identified application are incorporated byreference herein.

BACKGROUND

Aspects of the present disclosure relate to memory devices, and moreparticularly to semiconductor memory devices, and to methods ofoperating semiconductor memory devices.

Semiconductor memory devices may be classified into non-volatile memorydevices, such as flash memory devices, and volatile memory devices, suchas DRAMs. High speed operation and cost efficiency of DRAMs make itpossible for DRAMs to be used for system memories. Due to the continuingshrink in fabrication design rules for DRAMs, bit errors of memory cellsin the DRAMs may rapidly increase and yield of the DRAMs may decrease.Therefore, there is a need for improved reliability and/or credibilityof the semiconductor memory device.

SUMMARY

Some aspects of the present disclosure provide semiconductor memorydevices having improved or increased reliability, credibility and/orperformance.

Some example embodiments provide a method of operating a semiconductormemory device, capable of increasing reliability, credibility and/orperformance.

According to some example embodiments, a semiconductor memory deviceincludes a memory cell array, an error correction code (ECC) circuit, afault address register, a scrubbing control circuit and a control logiccircuit. The memory cell array includes a plurality of memory cell rowsand each of the plurality of memory cell rows includes volatile memorycells. The scrubbing control circuit is configured to generate ascrubbing address for a scrubbing operation on a first memory cell rowselected from the plurality of memory cell rows. The scrubbing addressis generated based on refresh operations performed on the memory cellrows. The control logic circuit is configured to control the ECC circuitand the scrubbing control circuit, and control the ECC circuit such thatthe ECC circuit performs an error detection operation on a plurality ofsub-pages in the first memory cell row to count a number of erroroccurrences in the first memory cell row during a first interval of thescrubbing operation, selectively correct a codeword in which an error isdetected based on the number of error occurrences in the first memorycell row, resulting in a corrected codeword or uncorrected codeword,write back the corrected codeword or the uncorrected codeword during asecond interval of the scrubbing operation, and store a row address ofthe first memory cell row in the fault address register as a row faultaddress in response to the number of error occurrences in the firstmemory cell row being equal to or greater than a reference value.

According to some example embodiments, there is provided a method ofoperating a semiconductor memory device including a memory cell arraythat includes a plurality of memory cell rows. According to the method,a first memory cell row is selected from the plurality of memory cellrows based on refresh row addresses for refreshing the memory cell rows,an error detection operation is, by an error correction code (ECC)circuit, performed on a plurality of sub-pages in the first memory cellrow by unit of codeword and a number of error occurrences in the firstmemory cell row is counted, whether to correct a codeword in which anerror is detected is determined based on the number of error occurrencesin the first memory cell row, and the codeword in which the error isdetected is written back to the memory cell array with our withoutcorrection based on the determining.

According to some example embodiments, a semiconductor memory deviceincludes a memory cell array, an error correction code (ECC) circuit, afault address register, a refresh control circuit, a scrubbing controlcircuit and a control logic circuit. The memory cell array includes aplurality of memory cell rows and each of the plurality of memory cellrows includes volatile memory cells. The refresh control circuit isconfigured to generate refresh row addresses for refreshing the memorycell rows. The scrubbing control circuit is configured to generate,based on counting the refresh row addresses, scrubbing addresses forperforming a scrubbing operation on a first memory cell row selectedfrom the plurality of memory cell rows. The control logic circuit isconfigured to control the ECC circuit and the scrubbing control circuit,controls the ECC circuit such that the ECC circuit performs an errordetection operation on a plurality of sub-pages in the first memory cellrow to count a number of error occurrences during a first interval inthe scrubbing operation, determines whether to correct a codeword inwhich an error is detected based on the number of error occurrences,store a row address of the first memory cell row in the fault addressregister as a row fault address in response to the number of erroroccurrences in the first memory cell row being equal to or greater thana reference value, and control the ECC circuit to skip an ECC decodingon a memory cell row designated by an access address from an externalsource when the access address matches the row fault address and whenthe access address is associated with a read command.

Accordingly, in some embodiments a semiconductor memory device includesan ECC circuit, a scrubbing control circuit and a fault addressregister. The ECC circuit may be configured to sequentially performerror detection operation on codewords in a memory cell row designatedby a scrubbing address provided from the scrubbing control circuit andcount a number of error occurrences. The ECC circuit may store a rowaddress of the memory cell row in the fault address register as a rowfault address when the counted number of error occurrences is equal toor greater than the reference value. The ECC circuit may skip errorcorrection and writes back an uncorrected codeword. Therefore, thesemiconductor memory device may prevent error bits from beingaccumulated and may enhance reliability, credibility and/or performance.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be described below in more detail withreference to the accompanying drawings.

FIG. 1 is a block diagram illustrating a memory system according to someexample embodiments.

FIG. 2 is a block diagram illustrating the semiconductor memory devicein FIG. 1 according to some example embodiments.

FIG. 3 illustrates an example of the first bank array in thesemiconductor memory device of FIG. 2 .

FIG. 4 is a block diagram illustrating the refresh control circuit inthe semiconductor memory device of FIG. 2 according to some exampleembodiments.

FIG. 5 is a circuit diagram illustrating an example of the refresh clockgenerator shown in FIG. 4 according to some example embodiments.

FIG. 6 is a circuit diagram illustrating another example of the refreshclock generator in FIG. 4 according to some example embodiments.

FIG. 7 is a block illustrating an example of the scrubbing controlcircuit in the semiconductor memory device of FIG. 2 according to someexample embodiments.

FIG. 8 is a block diagram illustrating the scrubbing address generatorin the scrubbing control circuit of FIG. 7 according to some exampleembodiments.

FIG. 9 is a block diagram illustrating another example of thesemiconductor memory device in FIG. 1 according to some exampleembodiments.

FIG. 10 is a circuit diagram illustrating disturbance between memorycells of a semiconductor memory device.

FIG. 11 is a block diagram illustrating an example of the victim addressdetector in the semiconductor memory device of FIG. 9 according to someexample embodiments.

FIG. 12 is a block diagram illustrating the disturbance detector in thevictim address detector of FIG. 11 .

FIG. 13 is a block diagram illustrating an example of the scrubbingcontrol circuit in the semiconductor memory device of FIG. 9 accordingto some example embodiments.

FIG. 14 is a block diagram illustrating the scrubbing address generatorin the scrubbing control circuit of FIG. 13 according to some exampleembodiments.

FIG. 15 illustrates the weak codeword address generator in the scrubbingcontrol circuit of FIG.13 according to some example embodiments.

FIG. 16 illustrates a portion of the semiconductor memory device of FIG.2 in a write operation.

FIG. 17 illustrates a portion of the semiconductor memory device of FIG.2 in a refresh operation or a read operation.

FIG. 18 illustrates an example of the fault address register in thesemiconductor memory device of FIG. 2 according to some exampleembodiments.

FIG. 19 is a block diagram illustrating an example of the ECC circuit inthe semiconductor memory device of FIG. 2 according to some exampleembodiments.

FIG. 20 illustrates an example of the ECC encoder in the ECC circuit ofFIG. 19 according to some example embodiments.

FIG. 21 illustrates an example of the ECC decoder in the ECC circuit ofFIG. 19 according to some example embodiments.

FIG. 22 illustrates that a normal refresh operation and a scrubbingoperation are performed in the semiconductor memory device of FIG. 2according to some example embodiments.

FIG. 23A and 23B illustrate aspects of scrubbing operations performed inthe semiconductor memory device of FIG. 2 .

FIG. 24 is a flow chart illustrating a scrubbing operation according tosome example embodiments.

FIG. 25 is a block diagram illustrating a semiconductor memory deviceaccording to some example embodiments.

FIG. 26 is a block diagram illustrating a semiconductor memory deviceaccording to some example embodiments.

FIG. 27 is a flow chart illustrating a method of operating asemiconductor memory device according to some example embodiments

FIG. 28 is a diagram illustrating a semiconductor package including thestacked memory device, according to some example embodiments.

DETAILED DESCRIPTION

Various example embodiments will be described more fully hereinafterwith reference to the accompanying drawings, in which some exampleembodiments are shown.

FIG. 1 is a block diagram illustrating a memory system according to someexample embodiments.

Referring to FIG. 1 , a memory system 20 may include a memory controller100 and a semiconductor memory device 200.

The memory controller 100 may control overall operation of the memorysystem 20. The memory controller 100 may control overall data exchangebetween an external host (not shown) and the semiconductor memory device200. For example, the memory controller 100 may write data in thesemiconductor memory device 200 and/or read data from the semiconductormemory device 200 in response to request from the external host.

In addition, the memory controller 100 may issue operation commands tothe semiconductor memory device 200 for controlling the semiconductormemory device 200. The memory controller 100 may transmit a clock signalCLK, a command CMD, and an address (signal) ADDR to the semiconductormemory device 200, and may exchange main data MD with the semiconductormemory device 200.

In some example embodiments, the semiconductor memory device 200 is amemory device including dynamic memory cells such as a dynamic randomaccess memory (DRAM), double data rate 4 (DDR4) synchronous DRAM(SDRAM), DDR5 SDRAM a low power DDR4 (LPDDR4) SDRAM, a LPDDR5 SDRAM or aLPDDR6 DRAM.

The semiconductor memory device 200 may include a memory cell array 300that stores the main data MD and parity data, an error correction code(ECC) circuit 400, a control logic circuit 210, a scrubbing controlcircuit 500 and a fault address register FAR 580.

The ECC circuit 400 may perform encoding or ECC encoding on write datato be stored in a target page of the memory cell array 300, and mayperform decoding or ECC decoding on a codeword read from the target pageunder control of the control logic circuit 210.

The scrubbing control circuit 500 may generate scrubbing addresses forperforming a scrubbing operation on a first memory cell row of aplurality of memory cell rows. For example, a scrubbing address may begenerated, and the scrubbing operation may be performed, whenever arefresh operation is performed on N memory cell rows of the plurality ofmemory cell rows included in the memory cell array 300. Here, N is anatural number equal to or greater than three.

The scrubbing operation may include at least first and second intervals.The scrubbing operation may include an error detection operationperformed during the first interval of the scrubbing operation, and aselective error correction and write-back operation performed during thesecond interval of the scrubbing operation.

The control logic circuit 210 may control the ECC circuit 400 such thatthe ECC circuit 400 performs an error detection operation on a pluralityof sub-pages in the first memory cell row by unit of codeword to count anumber of error occurrences to during the first interval in thescrubbing operation. The control logic circuit 210 may control the ECCcircuit 400 such that, during the second interval of the scrubbingoperation, the ECC circuit 400 determines whether to correct a codewordin which an error is detected based on the number of error occurrencesand write back the corrected codeword, or whether to write back theuncorrected codeword and store a row address of the first memory cellrow in the fault address register 580 as a row fault address.

The control logic circuit 210 may control the ECC circuit 400 to correctthe error and to write back the corrected codeword in a correspondingsub-page in the first memory cell row in response to the number of erroroccurrences being smaller than the reference value. The control logiccircuit 210 may control the ECC circuit 400 not to correct the error andto write back the uncorrected codeword in a corresponding sub-page inthe first memory cell row in response to the number of error occurrencesbeing equal to or greater than the reference value. In some exampleembodiments, the control logic circuit 210 may control the ECC circuit400 to skip ECC decoding on codewords in a corresponding memory cell rowif the number of error occurrences associated with the memory cell rowis equal to or greater than the reference value.

An access address associated with a read command may be received fromthe memory controller. If the access address matches a row fault addressstored in the fault address register 580, the control logic circuit 210may control the ECC circuit 400 to skip an ECC decoding on the memorycell row designated by the access address.

FIG. 2 is a block diagram illustrating the semiconductor memory device200 in FIG. 1 according to some example embodiments.

Referring to FIG. 2 , the semiconductor memory device 200 may includethe control logic circuit 210, an address register 220, a bank controllogic 230, a refresh control circuit 385, a row address multiplexer 240,a column address latch 250, a row decoder 260, a column decoder 270, thememory cell array 300, a sense amplifier unit 285, an I/O gating circuit290, the ECC circuit 400, the scrubbing control circuit 500, a data I/Obuffer 295, the fault address register 580, an address comparator 590and a fuse circuit 595.

The memory cell array 300 may include a plurality of bank arrays 310a˜310 s. The row decoder 260 may include a plurality of bank rowdecoders 260 a˜260 s respectively coupled to the plurality of bankarrays 310 a˜310 s, the column decoder 270 may include a plurality ofbank column decoders 270 a-270 s respectively coupled to the pluralityof bank arrays 310 a˜310 s, and the sense amplifier unit 285 may includeplurality of bank sense amplifiers 285 a˜285 s respectively coupled tothe plurality of bank arrays 310 a˜310 s.

The plurality of bank arrays 310 a˜310 s, the plurality of bank rowdecoders 260 a˜260 s, the plurality of bank column decoders 270 a˜270 sand plurality of bank sense amplifiers 285 a˜285 s may form a pluralityof banks. Each bank of the plurality of banks may include a respectivebank array 310, bank row decoder 260, bank column decoder 270, and banksense amplifier 285. Each of the plurality of bank arrays 310 a˜310 smay include a plurality of memory cells MC formed at intersections of aplurality of word-lines WL and a plurality of bit-line BTL.

The address register 220 may receive the address ADDR including a bankaddress BANK_ADDR, a row address ROW_ADDR and a column address COL_ADDRfrom the memory controller 100. The address register 220 may provide thereceived bank address BANK_ADDR to the bank control logic 230, thereceived row address ROW_ADDR to the row address multiplexer 240, andthe received column address COL_ADDR to the column address latch 250.

The bank control logic 230 may generate bank control signals in responseto the bank address BANK_ADDR. One of the plurality of bank row decoders260 a˜260 s corresponding to the bank address BANK_ADDR may be activatedin response to the bank control signals, and one of the plurality ofbank column decoders 270 a˜270 s corresponding to the bank addressBANK_ADDR may be activated in response to the bank control signals.

The row address multiplexer 240 may receive the row address ROW_ADDRfrom the address register 220, and receives a refresh row addressREF_ADDR from the refresh control circuit 385. The row addressmultiplexer 240 selectively outputs the row address ROW_ADDR or therefresh row address REF_ADDR as a row address RA. The row address RAthat is output from the row address multiplexer 240 is applied to theplurality of bank row decoders 260 a˜260 s.

The refresh control circuit 385 may sequentially output the refresh rowaddress REF_ADDR in response to a first refresh control signal IREF1 ora second refresh control signal IREF2 from the control logic circuit210.

When the command CMD from the memory controller 100 corresponds to anauto refresh command, the control logic circuit 210 may apply the firstrefresh control signal IREF1 to the refresh control circuit 385 wheneverthe control logic circuit 210 receives the auto refresh command. Whenthe command CMD from the memory controller 100 corresponds to aself-refresh entry command, the control logic circuit 210 may apply thesecond refresh control signal IREF2 to the refresh control circuit 385.The second refresh control signal IREF2 may be activated from a firsttime point when the control logic circuit 210 receives the self-refreshentry command to a second time point when the control logic circuit 210receives a self-refresh exit command. The refresh control circuit 385may sequentially increase or decrease the refresh row address REF_ADDRin response to receiving the first refresh control signal IREF1 or whilethe second refresh control signal IREF2 is activated.

The activated one of the plurality of bank row decoders 260 a˜260 s,which may be activated by the bank control logic 230, may decode the rowaddress RA that is output from the row address multiplexer 240, and mayactivate a word-line corresponding to the row address RA. For example,the activated bank row decoder 260 may apply a word-line driving voltageto the word-line corresponding to the row address RA.

The column address latch 250 may receive the column address COL_ADDRfrom the address register 220, and may temporarily store the receivedcolumn address COL_ADDR. In some embodiments, in a burst mode, thecolumn address latch 250 may generate column addresses that incrementfrom the received column address COL_ADDR. The column address latch 250may apply the temporarily stored or generated column address to theplurality of bank column decoders 270 a˜270 s.

The activated one of the plurality of bank column decoders 270 a˜270 smay activate a sense amplifier 285 corresponding to the bank addressBANK_ADDR and the column address COL_ADDR through the I/O gating circuit290.

The I/O gating circuit 290 may include a circuitry for gatinginput/output data, and may further include input data mask logic, readdata latches for storing data that is output from the plurality of bankarrays 310 a˜310 s, and write drivers for writing data to the pluralityof bank arrays 310 a˜310 s.

A codeword CW read from one bank array of the plurality of bank arrays310 a˜310 s may be sensed by a sense amplifier coupled to the one bankarray from which the data is to be read, and is stored in the read datalatches of the I/O gating circuit 290. The codeword CW stored in theread data latches may be provided to the memory controller 100 via thedata I/O buffer 295 after ECC decoding is performed on the codeword CWby the ECC circuit 400.

The main data MD to be written in one bank array of the plurality ofbank arrays 310 a˜310 s may be provided to the data I/O buffer 295 fromthe memory controller 100, and then provided to the ECC circuit 400 fromthe data I/O buffer 295. The ECC circuit 400 may perform an ECC encodingon the main data MD to generate parity data. The ECC circuit 400 mayprovide the main data MD and the parity data to the I/O gating circuit290, and the I/O gating circuit 290 may write the main data MD and theparity data in a sub-page of the target page in one bank array throughthe write drivers of the I/O gating circuit 290.

The data I/O buffer 295 may provide the main data MD from the memorycontroller 100 to the ECC circuit 400 in a write operation of thesemiconductor memory device 200, based on the clock signal CLK and mayprovide the main data MD from the ECC circuit 400 to the memorycontroller 100 in a read operation of the semiconductor memory device200.

The ECC circuit 400 may perform an ECC decoding on a codeword read froma sub-page of the target page and may provide an error generation signalEGS to the control logic circuit 210 when at least one error bit isdetected in the main data and/or in the codeword.

The scrubbing control circuit 500 may count the refresh row addressREF_ADDR, which sequentially changes, and may output a normal scrubbingaddress SCADDR whenever the scrubbing control circuit 500 counts Nrefresh row addresses. Here, N is a natural number equal to or greaterthan two. The normal scrubbing address SCADDR may include a scrubbingrow address SRA and a scrubbing column address SCA. The scrubbingcontrol circuit 500 may provide the scrubbing row address SRA and thescrubbing column address SCA to the row decoder 260 and the columndecoder 270.

The control logic circuit 210 may control operations of thesemiconductor memory device 200. For example, the control logic circuit210 may generate control signals for the semiconductor memory device 200in order to perform a write operation and/or a read operation. Thecontrol logic circuit 210 may include a command decoder 211 that decodesthe command CMD received from the memory controller 100 and a moderegister 212 that sets an operation mode of the semiconductor memorydevice 200.

The control logic circuit 210 may further include a counter 214 thatcounts error occurrences indicated by the error generation signal EGS.The counter 214 may count the error occurrences indicated by errorgeneration signal EGS in a scrubbing operation on the first memory cellrow. The control logic circuit 210 may compare (via an includedcomparator) a number of error occurrences (i.e., indicated by the errorgeneration signal EGS) with a reference value VTH and may provide theECC circuit 400 with an error threshold flag ETF when the number oferror occurrences is equal to or greater than the reference value VTH.The control logic circuit 210 may store a row address of the firstmemory cell row in the fault address register 580 as a row fault addressRF_ADDR in response to the number of error occurrences in the firstmemory cell row being equal to or greater than the reference value VTH.In some embodiments, the control logic circuit 210 may halt an operationof the counter 214 when the number of error occurrences in the firstmemory cell row is equal to or greater than the reference value VTH.

The command decoder 211 may generate control signals corresponding tothe command CMD by decoding a write enable signal, a row address strobesignal, a column address strobe signal, a chip select signal, etc. Thecontrol logic circuit 210 may generate a first control signal CTL1 tocontrol the I/O gating circuit 290, a second control signal CTL2 tocontrol the ECC circuit 400, and a third control signal CTL3 to controlthe scrubbing control circuit 500. In addition, the control logiccircuit 210 may provide the refresh control circuit 385 with a modesignal MS associated with a refresh period. The control logic circuit210 may generate the mode signal MS based on a temperature signal (notshown) representing an operating temperature of the semiconductor memorydevice 200.

The fuse circuit 595 may store the reference value VTH and may providethe reference value VTH to the control logic circuit 210. In someembodiments, the fuse circuit 595 may vary the reference value VTH byprogramming.

The address comparator 590 may compare a row address ROW_ADDR of theaccess address from ADDR the memory controller 100 with the row faultaddress RF_ADDR stored in the fault address register 580 to provide thecontrol logic circuit with a match signal MTS based on a result of thecomparison (for example, when the row address ROW_ADDR matches the rowfault address). The control logic circuit 210 may control the ECCcircuit 400 to skip ECC decoding on a memory cell row designated by therow address ROW_ADDR.

FIG. 3 illustrates an example of the first bank array in thesemiconductor memory device of FIG. 2 .

Referring to FIG. 3 , the first bank array 310 may include a pluralityof word-lines WL1˜WLm (where m is a natural number greater than two), aplurality of bit-lines BTL1˜BTLn (where n is a natural number greaterthan two), and a plurality of volatile memory cells MCs arranged atintersections between the word-lines WL1˜WLm and the bit-linesBTL1˜BTLn. Only a portion of the plurality of volatile memory cells MCof the first bank array 310 is shown in FIG. 3 to improve the clarity ofthe figure. Each of the memory cells MCs of the first bank array 310 mayinclude a cell transistor coupled to one of the word-lines WL1˜WLm andone of the bit-lines BTL1˜BTLn, and a cell capacitor coupled to the celltransistor.

FIG. 4 is a block diagram illustrating an example of the refresh controlcircuit in the semiconductor memory device of FIG. 2 according to someexample embodiments.

Referring to FIG. 4 , the refresh control circuit 385 may include arefresh clock generator 390 and a refresh counter 397.

The refresh clock generator 390 may generate a refresh clock signal RCKin response to the first refresh control signal IREF1, the secondrefresh control signal IREF2 and the mode signal MS. The mode signal MSmay determine a refresh period of a refresh operation. As describedabove, the refresh clock generator 390 may generate the refresh clocksignal RCK whenever the refresh clock generator 390 receives the firstrefresh control signal IREF1 or while the second refresh control signalIREF2 is activated.

The refresh counter 397 may generate the refresh row address REF_ADDRdesignating sequentially the memory cell rows by performing countingoperation at the period of the refresh clock signal RCK.

FIG. 5 is a circuit diagram illustrating an example of the refresh clockgenerator 390 shown in FIG. 4 according to some example embodiments.

Referring to FIG. 5 , a refresh clock generator 390 a may include aplurality of oscillators 391, 392 and 393, a multiplexer 394 and adecoder 395 a. The decoder 395 a may decode the first refresh controlsignal IREF1, the second refresh control signal IREF2 and the modesignal MS to output a clock control signal RCS1. The oscillators 391,392, and 393 generate refresh clock signals RCK1, RCK2 and RCK3 havingdifferent periods. The multiplexer 394 is configured to select one ofthe refresh clock signals RCK1, RCK2 and RCK3 to provide the refreshclock signal RCK in response to the clock control signal RCS1.

FIG. 6 is a circuit diagram illustrating another example of the refreshclock generator 390 shown in FIG. 4 according to some exampleembodiments.

Referring to FIG. 6 , a refresh clock generator 390 b may include adecoder 395 b, a bias unit 396 a and an oscillator 396 b. The decoder395 b may decode the first refresh control signal IREF1, the secondrefresh control signal IREF2 and the mode signal MS, and may output aclock control signal RCS2. The bias unit 396 a may generate a controlvoltage VCON in response to the clock control signal RCS2. Theoscillator 396 b may generate the refresh pulse signal RCK having avariable period, according to the control voltage VCON.

FIG. 7 is a block illustrating an example of the scrubbing controlcircuit in the semiconductor memory device of FIG. 2 according to someexample embodiments.

Referring to FIG. 7 , the scrubbing control circuit 500 may include acounter 505 and a scrubbing address generator 510.

The counter 505 may count the refresh row address REF_ADDR and maygenerate an internal scrubbing signal ISRB. The internal scrubbingsignal ISRB may be activated during a first interval when the counter505 counts the refresh row address REF_ADDR by a number designated by acounting control signal CCS. The first interval may correspond to a timeinterval for refreshing one memory cell row.

The scrubbing address generator 510 may generate a normal scrubbingaddress SCADDR associated with a normal scrubbing operation forcodewords in each of the memory cell rows, which may gradually change inthe first scrubbing mode, in response to the internal scrubbing signalISRB.

The normal scrubbing address SCADDR may include a scrubbing row addressSRA and a scrubbing column address SCA. The scrubbing row address SRAmay designate one page in one bank array and the scrubbing columnaddress SCA may designate one of the codewords in the one page. Thescrubbing address generator 510 may provide the scrubbing row addressSRA to a corresponding row decoder and the scrubbing column address SCAto a corresponding column decoder.

The scrubbing operation that is performed based on the normal scrubbingaddress SCADDR may be referred to as a normal scrubbing operation,because the scrubbing operation performed based on the normal scrubbingaddress SCADDR may be performed on all codewords included in the memorycell array 300.

FIG. 8 is a block diagram illustrating the scrubbing address generatorin the scrubbing control circuit of FIG. 7 according to some exampleembodiments.

Referring to FIG. 8 , the scrubbing address generator 510 may include apage segment counter 511 and a row counter 513.

The page segment counter 511 may increase the scrubbing column addressSCA by one while the internal scrubbing signal ISRB is activated, andmay activate a maximum address detection signal MADT (and reset thescrubbing column address SCA) whenever the scrubbing column address SCAreaches its maximum value, in response to the internal scrubbing signalISRB. The page segment counter 511 may provide the maximum addressdetection signal MADT to the row counter 513.

In response to the internal scrubbing signal ISRB, the row counter 513may start counting operation on receiving the internal scrubbing signalISRB initially, and may increase the scrubbing row address SRA by onewhenever the activated maximum address detection signal MADT is receivedfrom the page segment counter 511. Since the internal scrubbing signalISRB may be activated during a first interval while a refresh operationis performed on one memory cell row, the page segment counter 511 maygenerate the scrubbing column address SCA associated with codewords inone page during the first interval.

FIG. 9 is a block diagram illustrating another example of thesemiconductor memory device in FIG. 1 according to some exampleembodiments.

A semiconductor memory device 200 a of FIG. 9 differs from thesemiconductor memory device 200 of FIG. 2 in that the semiconductormemory device 200 a further includes a victim address detector 560 and ascrubbing control circuit 500 a that outputs a weak codeword addressWCADDR in a second scrubbing mode.

Referring to FIG. 9 , a control logic circuit 210 a may further generatea fourth control signal CTL 4 for controlling the victim addressdetector 560.

The victim address detector 560 may count a number of accesses to afirst memory region in the memory cell array 300, and may generate atleast one victim address VCT_ADDR that designates at least one adjacentmemory region adjacent to the first memory region when the number of thecounted accesses reaches the reference number of times during areference interval. The victim address VCT_ADDR may be stored in anaddress storing table of the scrubbing control circuit 500 a.

In a first scrubbing mode, the scrubbing control circuit 500 a mayprovide a scrubbing row address SRA and a scrubbing column address SCAto the row decoder 260 and the column decoder 270, respectively. In asecond scrubbing mode, the scrubbing control circuit 500 a may output anaddress of a codeword associated with the victim address VCT_ADDR thatis stored in the address storing table as the weak codeword addressWCADDR. The weak codeword address WCADDR may include a weak codeword rowaddress WCRA and a weak codeword column address WCCA. The scrubbingcontrol circuit 500 a may provide the weak codeword row address WCRA andthe weak codeword column address WCCA to the row decoder 260 and thecolumn decoder 270, respectively.

FIG. 10 is a circuit diagram illustrating a disturbance between memorycells of a semiconductor memory device.

Referring to FIG. 10 , a part of the semiconductor memory device 200 aincludes memory cells 51, 52, and 53 and a bit-line sense amplifier 60.

It is assumed that each of the memory cells 51, 52, and 53 is connectedto the same bit-line BTL. In addition, the memory cell 51 is connectedto a word-line WL<g−1>, the memory cell 52 is connected to a word-lineWL<g>, and the memory cell 53 is connected to a word-line WL<g+1>. Asshown in FIG. 10 , the word-lines WL<g−1> and WL<g+1> are locatedadjacent to the word-line WL<g>. The memory cell 51 includes an accesstransistor CT1 and a cell capacitor CC1. A gate terminal of the accesstransistor CT1 is connected to the word-line WL<g−1>, and the accesstransistor CT1 is connected between the bit-line BTL and the cellcapacitor CC1. The memory cell 52 includes an access transistor CT2 anda cell capacitor CC2. A gate terminal of the access transistor CT2 isconnected to the word-line WL<g>, and the access transistor CT2 isconnected between to the bit-line BTL and the cell capacitor CC2. Also,the memory cell 53 includes an access transistor CT3 and a cellcapacitor CC3. A gate terminal of the access transistor ST3 is connectedto the word-line WL<g+1>, and the access transistor CT3 is connectedbetween the bit-line BTL and the cell capacitor CC3.

The bit-line sense amplifier 60 may include an N sense amplifierdischarging a low level bit line among bit lines BTL and BTLB and a Psense amplifier charging a high level bit line among the bit lines BTLand BTLB.

During a refresh operation, the bit-line sense amplifier 60 may rewritethrough the N sense amplifier or the P sense amplifier data that isstored in a selected memory cell. During a read operation or a writeoperation, a select voltage (for example, Vpp) may be provided to theword-line WL<g>. However, due to capacitive coupling effect, a voltageof adjacent word-lines WL<g−1> and WL<g+1> may rise even when no selectvoltage is applied. Such capacitive coupling is indicated with parasiticcapacitances Ccl1 and Ccl2.

Between refresh operations, if the word-line WL<g> is accessedrepeatedly, charges stored in the cell capacitors CC1 and CC3 of thememory cells 51 and 53 connected to the word-lines WL<g−1> and WL<g+1>may leak gradually. In this case, the reliability of a logic ‘0’ storedin the cell capacitor CC1 and a logic ‘2’ stored in the cell capacitorCC3 may not be reduced. Therefore, the scrubbing operation on the memorycells is needed at an appropriate time.

FIG. 11 is a block diagram illustrating an example of the victim addressdetector in the semiconductor memory device of FIG. 9 according to someexample embodiments.

Referring to FIG. 11 , the victim address detector 560 may include adisturbance detector 570 and a victim address generator 577.

The disturbance detector 570 may count a number of accesses to a firstmemory region (i.e., at least one memory cell row) based on the rowaddress ROW_ADDR and may generate a first detection signal DET1 when thenumber of the counted accesses reaches a reference value during areference (or predetermined) interval.

The victim address generator 577 may generate the at least one victimaddress VCT_ADDR1 and VCT_ADDR2 in response to the first detectionsignal DET1. For example, the at least one victim address VCT_ADDR1 andVCT_ADDR2 may each be a row address designating a second memory regionand a third memory region which are located adjacent to the first memoryregion. The victim address generator 577 may provide the at least onevictim address VCT_ADDR1 and VCT_ADDR2 to an address storing table inthe scrubbing control circuit 500 a.

FIG. 12 is a block diagram illustrating the disturbance detector in thevictim address detector of FIG. 11 .

Referring to FIG. 12 , the disturbance detector 570 may include anaccess counter 571, a threshold register 573 and a comparator 575.

The access counter 571 may count a number of accesses to a specifiedaddress (or a specified memory region) based on the row addressROW_ADDR. For example, the access counter 571 may count a number ofaccesses to a specified word-line. The number of accesses may be countedon a specific word-line or a word-line group including at least twoword-lines. Moreover, a count of the number of accesses may be performedby a specific block unit, a bank unit, or a chip unit.

The threshold register 573 may store a maximum disturbance occurrencecount that may be selected to provide an desired assurance level as tothe reliability of data in a specific word-line or a memory unit. Forexample, a threshold value (or a reference value) on one word-line maybe stored in the threshold register 573. Alternatively, a thresholdvalue on one word line group, one block, one bank unit, or one chip unitmay be stored in the threshold register 573.

The comparator 575 may compare the threshold value stored in thethreshold register 573 with the number of accesses to a specific memoryregion counted by the access counter 571. If there is a memory regionwhere the counted number of accesses reaches the threshold value, thecomparator 575 may generate the first detection signal DET1. Thecomparator 575 may provide the first detection signal DET1 to the victimaddress generator 577.

FIG. 13 is a block diagram illustrating an example of the scrubbingcontrol circuit in the semiconductor memory device of FIG. 9 accordingto some example embodiments.

Referring to FIG. 13 , the scrubbing control circuit 500 a may include acounter 505, a scrubbing address generator 510 a and a weak codewordaddress generator 520 a.

Some operations of the counter 505, and the scrubbing address generator510 a are substantially similar with operations of the counter 505 andthe scrubbing address generator 510 in FIG. 7 . The scrubbing addressgenerator 510 a of FIG. 13 may further receive the scrubbing mode signalSMS and generate the normal scrubbing address SCADDR in the firstscrubbing mode.

The weak codeword address generator 520 a may generate a weak codewordaddress WCADDR associated with a weak scrubbing operation associatedwith weak codewords in the bank array in the second scrubbing mode, inresponse to the internal scrubbing signal ISRB and the scrubbing modesignal SMS. The weak codeword address WCADDR may include a weak codewordrow address WCRA and a weak codeword column address WCCA.

The scrubbing mode signal SMS may indicate the first scrubbing mode whenthe scrubbing mode signal SMS has a first logic level and indicates thesecond scrubbing mode when the scrubbing mode signal SMS has a secondlogic level. The scrubbing mode signal SMS may be included in the thirdcontrol signal CTL3. The weak codeword address generator 520 a mayprovide the weak codeword row address WCRA to the corresponding rowdecoder and the weak codeword column address SCA to the correspondingcolumn decoder.

The weak codeword address generator 520 a may include an address storingtable therein, which may store addresses of codewords associated withthe victim address VCT_ADDR. The scrubbing operation performed based onthe weak codeword address WCADDR may be referred to as a targetscrubbing operation because the scrubbing operation is performed on theweak codewords.

FIG. 14 is a block diagram illustrating the scrubbing address generator510 a in the scrubbing control circuit of FIG. 13 according to someexample embodiments.

Referring to FIG. 14 , the scrubbing address generator 510 a may includea page segment counter 511 a and a row counter 513 a.

The page segment counter 511 a may increase the scrubbing column addressSCA by one during the internal scrubbing signal ISRB is activated in thefirst scrubbing mode, and may activate a maximum address detectionsignal MADT whenever the scrubbing column address SCA reaches itsmaximum value (and reset the scrubbing column address SCA), in responseto the internal scrubbing signal ISRB and the scrubbing mode signal SMS.The page segment counter 511 a may provide the maximum address detectionsignal MADT to the row counter 513 a.

In response to the internal scrubbing signal ISRB and the scrubbing modesignal SMS, the row counter 513 a may start a counting operation uponreceiving the internal scrubbing signal ISRB initially, and may increasethe scrubbing row address SRA by one whenever the activated maximumaddress detection signal MADT is received from the page segment counter511 a.

FIG. 15 illustrates the weak codeword address generator 520 a in thescrubbing control circuit of FIG.13 according to some exampleembodiments.

Referring to FIG. 15 , the weak codeword address generator 520 a mayinclude a table pointer 521, an address storing table 530 and a sensingunit 540.

The address storing table 530 may store address information WCRA1˜WCRAsand WCCA1˜WCCAt (where t is a positive integer greater than s) of weakcodewords included in the memory cell array 300.

The weak codewords may be all or some of a weak page that includes anumber of error bits greater than a reference value among pages in bankarrays of the memory cell array. In addition, the weak codewords may becodewords of neighbor pages adjacent to an intensively accessed memoryregion.

The table pointer 521 may generate a pointer signal TPS which mayprovide location information for the address storing table 530 inresponse to the internal scrubbing signal ISRB and the scrubbing modesignal SMS during the first interval in the second scrubbing mode, andmay provide the pointer signal TPS to the address storing table 530. Theaddress storing table 530 may include a nonvolatile storage. The atleast one victim address VCT_ADDR1 and VCT_ADDR2 provided from thevictim address generator 577 in FIG. 11 may be stored in the addressstoring table 530.

The pointer signal TPS may gradually increase by a predetermined amountduring the first interval, and the address storing table 530 may outputa weak codeword address stored in a location (indicated by the pointersignal TPS) as the weak codeword row address WCRA and the weak codewordcolumn address WCCA through the sensing unit 540 in response to thepointer signal TPS whenever the pointer signal TPS is applied. Thesensing unit 540 may provide the weak codeword row address WCRA to acorresponding row decoder and the weak codeword column address WCCA to acorresponding column decoder.

The control logic circuit 210 a may apply different refresh periods tosome memory cell rows based on a number of error bits for each of thememory cell rows, which are detected by the scrubbing operation.

FIG. 16 illustrates a portion of the semiconductor memory device of FIG.2 in a write operation.

In FIG. 16 , the control logic circuit 210, the first bank array 310 a,the I/O gating circuit 290, and the ECC circuit 400 are illustrated.

Referring to FIG. 16 , the first bank array 310 a may include a normalcell array NCA and a redundancy cell array RCA. The normal cell arrayNCA may include a plurality of first memory blocks MB0˜MB15, i.e.,311˜313, and the redundancy cell array RCA may include at least a secondmemory block 314. The first memory blocks 311˜313 may be memory blocksthat are used in determining a memory capacity of the semiconductormemory device 200. The second memory block 314 is for ECC and/orredundancy repair. Since the second memory block 314 is used for ECC,redundancy repair, data line repair and/or block repair to repair ‘fail’cells generated in the first memory blocks 311˜313, the second memoryblock 314 may be also referred to as an EDB block. In each of the firstmemory blocks 311˜313, a plurality of first memory cells may be arrangedin rows and columns. In the second memory block 314, a plurality ofsecond memory cells may be arranged in rows and columns. The firstmemory cells connected to intersections of the word-lines WL and thebit-lines BTL may be dynamic memory cells. The second memory cellsconnected to intersections of the word-lines WL and bit-lines RBTL maybe dynamic memory cells.

The I/O gating circuit 290 may include a plurality of switching circuits291 a˜291 d respectively connected to the first memory blocks 311˜313and the second memory block 314. In the semiconductor memory device 200,bit-lines corresponding to data of a burst length (BL) may besimultaneously accessed to support the BL indicating the maximum numberof column positions that is accessible. For example, the BL may be setto 8.

The ECC circuit 400 may be connected to the switching circuits 291 a˜291d through first data lines GIO and second data lines EDBIO. The controllogic circuit 210 may receive the command CMD and the address ADDR andmay decode the command CMD to generate the first control signal CTL1 forcontrolling the switching circuits 291 a˜291 d and the second controlsignal CTL2 for controlling the ECC circuit 400.

When the command CMD is a write command, the control logic circuit 210may provide the second control signal CTL2 to the ECC circuit 400 andthe ECC circuit 400 may perform the ECC encoding on the main data MD togenerate parity bits associated with the main data MD and provides theI/O gating circuit 290 with the codeword CW including the main data MDand the parity bits. The control logic circuit 210 may provide the firstcontrol signal CTL1 to the I/O gating circuit 290 such that the codewordCW is to be stored in a sub-page of the target page in the first bankarray 310.

FIG. 17 illustrates a portion of the semiconductor memory device of FIG.2 in a refresh operation (scrubbing operation) or a read operation.

In FIG. 17 , the control logic circuit 210, the first bank array 310 a,the I/O gating circuit 290, the ECC circuit 400, the fault addressregister 580 and the address comparator 590 are illustrated.

Referring to FIG. 17 , when the command CMD is a refresh command todesignate a refresh operation, the scrubbing control circuit 500 maygenerate the scrubbing addresses based on counting refresh rowaddresses, and the control logic circuit 210 may provide the firstcontrol signal CTL1 to the I/O gating circuit 290 such that a readcodeword RCW stored in each of sub-pages of the target page in the firstbank array 310 is sequentially provided to the ECC circuit 400.

The ECC circuit 400 may perform an error detection operation on eachread codeword RCW and provide the error generation signal EGS to thecontrol logic circuit 210 in response to detecting an error bit during afirst period of the scrubbing operation. The control logic circuit 210may count the number of error occurrences indicated by the errorgeneration signal EGS for one page and may determine whether a row faultoccurs in the target page based on comparison of the number of erroroccurrences with the reference value VTH. When the number of erroroccurrences is equal to or greater than the reference value VTH, thecontrol logic circuit 210 may provide the ECC circuit 400 with the errorthreshold flag ETH having a high level and may store a row address ofthe target page in the fault address register 580.

The control logic circuit 210 may determine whether to correct acodeword in which the error is detected based on comparison of thenumber of error occurrences with the reference value VTH, and may writeback the codeword in which the error is selectively corrected during asecond interval of the scrubbing operation.

When the command CMD corresponds to a read command, the ECC circuit 400may provide a corrected main data C_MD to the data I/O buffer 295 withskipping of writing back the codeword in which the error is detected.

When the command CMD corresponds to a read command after the row faultaddress RF_ADDR is stored in the fault address register 580, the addresscomparator 590 may compare the row address ROW_ADDR with the row faultaddress RF_ADDR and may provide the control logic circuit 210 with thematch signal MTS indicating a result of the comparison. When the matchsignal MTS indicates that the row address ROW_ADDR matches the row faultaddress RF_ADDR, the control logic circuit 210 may control the ECCcircuit 400 to skip an ECC decoding on a memory cell row designated bythe row address ROW_ADDR.

FIG. 18 illustrates the fault address register in the semiconductormemory device of FIG. 2 according to some example embodiments.

Referring to FIG. 18 , each of a plurality of indexes (e.g., entries)Idx11, Indx12, . . . , Idx1 u (where u is a natural number greater thantwo) of the fault address register 580 may include information on arespective row fault address RF_ADDR. Each row fault address RF_ADDR mayrefer to a row fault memory cell row which was found to have a row faultduring a first interval of the scrubbing operation. The fault addressregister 580 includes a plurality of columns 581 and 583.

The column 581 may store a row fault address RF_ADDR of each of the rowfault memory cell rows and the column 583 may store a number of erroroccurrences ECNT of each of the row fault memory cell rows. The rowfault address RF_ADDR may include a bank group address (‘BGA’), a bankaddress (‘BA’), and a row address (‘RA’) of each of the row fault memorycell rows.

In FIG. 18 , it is assumed that a memory cell row is found to have a rowfault when the number of error occurrences ECNT detected during thefirst interval is equal to or greater than three, but the presentdisclosure is not limited thereto.

The control logic circuit 210 in FIG. 2 may perform a soft post packagerepair (PPR) on at least some of the row fault memory cell rows byreferring to the fault address register 580. The control logic circuit210 may perform a soft PPR on the at least some of the row fault memorycell rows by storing (moving) data stored in the at least some of therow fault memory cell rows in a redundancy region of the memory cellarray 300. The row fault address RF_ADDR of the at least some of the rowfault memory cell rows on which the soft PPR is performed may be resetin the fault address register 580 (e.g., may be removed from the faultaddress register 580) and a row fault address of a new row fault memorycell row may be stored in the fault address register 580.

FIG. 19 is a block diagram illustrating an example of the ECC circuit inthe semiconductor memory device of FIG. 2 according to some exampleembodiments.

Referring to FIG. 19 , the ECC circuit 400 may include an ECC encoder410, an ECC decoder 430 and a (ECC) memory 415. The memory 415 may storean ECC 417. The ECC 417 may be a single error correction (SEC) code. ormay be a single error correction/double error detection (SECDED) code.

Using the ECC 417, the ECC encoder 410 may generate parity data PRTassociated with a write data WMD to be stored in the normal cell arrayNCA of the first bank array 310. The parity data PRT may be stored inthe redundancy cell array RCA of the first bank array 310.

The ECC decoder 430 may perform an ECC decoding on a read data RMD basedon a read data RMD and a parity data PRT read respectively from thenormal cell array NCA and redundant cell array RCA of the first bankarray 310 using the ECC 417. When the read data RMD includes at leastone error bit as a result of the ECC decoding, the ECC decoder 430 mayprovide the error generation signal EGS to the control logic circuit210, selectively correct the error bit in the read data RMD, and writeback the read data RMD in a scrubbing operation, and may output thecorrected main data C_MD in a read operation.

FIG. 20 illustrates an example of the ECC encoder in the ECC circuit ofFIG. 19 according to some example embodiments.

Referring to FIG. 20 , the ECC encoder 410 may include a paritygenerator 420. The parity generator 420 may receive write data WMD andbasis bit BB and may generate the parity data PRT by performing, forexample, an XOR array operation.

FIG. 21 illustrates an example of the ECC decoder in the ECC circuit ofFIG. 19 according to some example embodiments.

Referring to FIG. 21 , the ECC decoder 430 may include a syndromegeneration circuit 440, an error locator 460, a data corrector 470 adata latch 480, a multiplexer 485 and a demultiplexer 490. The syndromegeneration circuit 440 may include a check bit generator 441 and asyndrome generator 443.

The check bit generator 441 may generate check bits CHB based on theread data RMD by performing, an XOR array operation. The syndromegenerator 443 may generate a syndrome SDR by comparing correspondingbits of the parity data PRT and the check bits CHB.

The error locator 460 may generate an error position signal EPSindicating a position of an error bit in the read data RMD, and mayprovide the error position signal EPS to the data corrector 470 when allbits of the syndrome SDR are not ‘zero’. In addition, when the read dataRMD includes an error bit, the error locator 460 may provide the errorgeneration signal EGS to the control logic circuit 210.

The data latch 480, in a scrubbing operation, may receive page data PDTincluding a plurality of read data RMDs, and in response to an operationmode signal OMS and a data control signal DCS, may provide the datacorrector 470 with the read data RMD including a correctable error bitin a scrubbing operation or provide the data corrector 470 with the readdata RMD without regard to an error bit in a read operation. Theoperation mode signal OMS may designate one of the scrubbing operationand the read operation. The operation mode signal OMS and the controlsignal DCS may be included in the second control signal CTL2 in FIG. 2 .

The data corrector 470 may receive the read data RMD, may correct theerror bit in the read data RMD based on the error position signal EPSwhen the read data RMD includes the error bit, and may output thecorrected main data C_MD.

The multiplexer 485 may select one of the read data RMD or the correctedmain data C_MD in response to the error threshold flag ETF, and mayprovide the selected one to the demultiplexer 490. When the errorthreshold flag ETF indicates that the number of error occurrences areequal to or greater than the reference value, the multiplexer 485 mayprovide the read data RMD to the demultiplexer 490.

The demultiplexer 490, in response to the operation mode signal OMS, mayprovide the I/O gating circuit 290 with an output of the multiplexer 485in the scrubbing mode, and may provide the data I/O buffer 295 with theoutput of the multiplexer 485 in the read operation.

FIG. 22 illustrates how a normal refresh operation and a scrubbingoperation may be performed in the semiconductor memory device of FIG. 2according to some example embodiments.

In FIG. 22 , tRFC may denote a refresh cycle and means a time forrefreshing one memory cell row, and tREFI may denote a refresh intervaland means an interval between two consecutive refresh commands.

Referring to FIG. 22 , it is noted that the scrubbing control circuit500 designates memory cell rows S times, on which the ECC circuitperforms the scrubbing operation SCRB whenever the normal refreshoperation REF is performed on memory cell rows N-times in response tothe refresh command. S may be a natural number smaller than N.

The scrubbing operation SCRB on one memory cell row includes M scrubbingerror detection operations SCD1˜SCDM during a first interval INT11 andone of a scrubbing write back operation SCWC with writing back correcteddata or a scrubbing write back operation SCW-NC with writing backuncorrected data during a second interval INT12.

The ECC circuit 400 in the semiconductor memory device 200 sequentiallyread data corresponding to a codeword from each of M sub-pages in thememory cell row (i.e., read M codewords), and perform error detection onthe M codewords to count a number of error occurrences during the firstinterval INT11 of the scrubbing operation. The ECC circuit 400 may writeback a corrected codeword or an uncorrected codeword based on the numberof error occurrences during the second interval INT12 of the scrubbingoperation.

When the counted number of error occurrences are equal to or greaterthan the reference value, a memory cell row including errors equal to orgreater than the reference value has a high probability of occurrence ofa row fault. Writing back a corrected codeword in a sub-page of thememory cell row in which the row fault occurs may generate amis-corrected error in the memory cell row in which the row fault occursand correctable errors in the memory cell row may be changed touncorrectable errors.

In the semiconductor memory device according to example embodiments, theECC circuit 400 may skip an error correction on the memory cell row inwhich the row fault occurs and writes back the uncorrected codeword,which may prevent the correctable errors from being changed touncorrectable errors. A sum of the first interval INT11 and the secondinterval INT12 may correspond to two times of the refresh cycle tRFC.The control logic circuit 210 may assign an interval for scrubbingoperation during an interval corresponding to two times of the refreshcycle tRFC.

FIG. 23A and 23B illustrate scrubbing operations performed in thesemiconductor memory device of FIG. 2 .

In FIG. 23A and 23B, a signal RMW is a signal that identifies a firstinterval and a second interval of the scrubbing operation, and ECC_ONrepresents an ECC decoding operation associated with writing back thecorrected data.

Referring to FIGS. 2 and 23A, the ECC circuit 400 may perform errordetection operation on a plurality of sub-pages in one memory cell row,and the ECC circuit 400 may count a number of error occurrences in afirst interval INT21 of the scrubbing operation. The error thresholdflag ETF may be transited to a high level when the counted number oferror occurrences is equal to or greater than a reference value. Thecontrol logic circuit 210 may store in the fault address register 580 arow address DRA of the memory cell row in response to the errorthreshold flag ETF transitioning to a high level.

Since the error threshold flag ETF is a high level in a second intervalINT22, the ECC circuit 400 may skip error correcting of the error bits,and as seen in FIG. 23A ECC_ON may have a low level in the secondinterval INT22. Operation on another memory cell row in each of a firstinterval INT31 and a second interval INT32 may be substantially the sameas the described operations in each of the first interval INT21 and thesecond interval INT22.

Referring to FIGS. 2 and 23B, the ECC circuit 400 may perform errordetection operation on a plurality of sub-pages in one memory cell row,and the ECC circuit 400 may count a number of error occurrences in afirst interval INT21′ of the scrubbing operation. The error thresholdflag ETF may be maintained at a low level when the counted number oferror occurrences is smaller than the reference value. The control logiccircuit 210 does not store in the fault address register 580 a rowaddress DRA of the memory cell row in response to the error thresholdflag ETF being a low level.

Since the error threshold flag ETF is a low level in a second intervalINT22′, the ECC circuit 400 may correct the error bits, and as seen inFIG. 23B, ECC ON may have a high level in the second interval INT22′.The ECC circuit 400 may write back the corrected data. Operation onanother memory cell row in each of a first interval INT31′ and a secondinterval INT32′ may be substantially the same as the described operationin each of the first interval INT21′ and the second interval INT22′.

FIG. 24 is a flow chart illustrating a scrubbing operation according tosome example embodiments.

Referring to FIGS. 2 and 24 , the ECC circuit 400 may perform an errordetection operation on a first memory cell row (operation S110). Theerror detection operation may be performed by unit of codeword, that iscodeword by codeword. The ECC circuit 400 may determine whether at leastone error has occurred in the first memory cell row (operation S120).When no error has occurred in the first memory cell row (NO in operationS120), the control logic circuit 210 increases a row address by one andthe ECC circuit 400 may perform an error detection operation on a secondmemory cell row.

When at least one error has occurred in the first memory cell row (YESin operation S120), the control logic circuit 210 then determineswhether a number of error occurrences is equal to or greater than thereference value VTH (operation S130). When the number of erroroccurrences is equal to or greater than the reference value VTH (YES inoperation S130), the ECC circuit 400 may perform a scrubbing operationby writing back the codeword without correcting the error. (operationS140). When the number of error occurrences is smaller than thereference value VTH (NO in operation S130), the ECC circuit 400 mayperform a scrubbing operation by correcting the codeword and writingback the corrected codeword (operation S150).

FIG. 25 is a block diagram illustrating a semiconductor memory deviceaccording to some example embodiments.

Referring to FIG. 25 , a semiconductor memory device 200 b isillustrated. The semiconductor memory device 200 b includes a pluralityof bank arrays 310 a˜310 s, a plurality of ECC engines ECCE 400 a˜400 scorresponding to the plurality of bank arrays 310 a˜310 s and aplurality of sub fault address registers 580 a˜580 s corresponding tothe plurality of bank arrays 310 a˜310 s. The plurality of ECC engines400 a˜400 s may correspond to the ECC engine 400 in FIG. 2 and theplurality of sub fault address registers 580 a˜580 s may correspond tothe fault address register 580 in FIG. 2 .

The ECC engine 400 a may perform a normal scrubbing operation on memorycell rows in bank array 310 a because a memory cell row having a rowfault is not detected in the bank array 310 a. On the other hand, amemory cell row having a row fault RF may be detected in each of thebank arrays 310 b and 310 s, a row address of the memory cell row havingthe row fault RF in each of the bank arrays 310 b and 310 s may bestored in each of the sub fault address registers 580 b and 580 s as arow fault address, and each of the ECC engine 400 b and 400 s mayperform a scrubbing operation by writing back codeword withoutcorrection of an error in a second interval of the scrubbing operation.

The control logic circuit 210 may control individually each of the ECCengines 400 a˜400 s and each of the sub fault address registers 580a˜580 s, and the control logic circuit 210 may control each ECC engine400 a˜400 s and each sub fault address register 580 a˜580 s based ondetecting the row fault address register in the respective bank array ofthe plurality of bank arrays 310 a˜310 s.

FIG. 26 is a block diagram illustrating a semiconductor memory deviceaccording to example embodiments.

Referring to FIG. 26 , a semiconductor memory device 600 may include abuffer die 610 and group dies 620 configured to provide a soft erroranalyzing and correcting function in a stacked chip structure.

The group dies 620 may include a plurality of memory dies 620-1 to 620-pwhich is stacked on the buffer die 610 and conveys data through aplurality of through silicon via (TSV) lines.

At least one of the memory dies 620-1 to 620-p may include a cell core621 including a memory cell array, an ECC circuit 622 which generatestransmission parity bits (i.e., transmission parity data) based ontransmission data to be sent to the buffer die 611, a refresh controlcircuit (RCC) 624, a scrubbing control circuit (SCC) 623 and a faultaddress register (FAR) 625. The ECC circuit 622 may be referred to as a‘cell core ECC circuit’.

The ECC circuit 622 may employ the ECC circuit 400 of FIG. 19 . Therefresh control circuit 624 may employ the refresh control circuit 385of FIG. 4 . The scrubbing control circuit 623 may employ the scrubbingcontrol circuit 500 of FIG. 7 or the scrubbing control circuit 500 a ofFIG. 13 .

The ECC circuit 622 and the scrubbing control circuit 623 may perform ascrubbing operation on memory cell rows in the memory die when a refreshoperation is performed on the memory cell rows. The ECC circuit 622 maycount a number of error occurrences in a first interval of the scrubbingoperation, and may store a row address of the memory cell row in thefault address register 625 as a row fault address when the countednumber of error occurrences is equal to or greater than the referencevalue in a first interval of the scrubbing operation, and the ECCcircuit 622 may skip error correction in a second interval of thescrubbing operation. Therefore, the ECC circuit 622 may prevent orreduce generation of uncorrectable errors.

The buffer die 610 may include a via ECC circuit 612 which corrects atransmission error using the transmission parity bits when atransmission error is detected from the transmission data receivedthrough the TSV lines and which generates error-corrected data.

The semiconductor memory device 600 may be a stack chip type memorydevice or a stacked memory device which conveys data and control signalsthrough the TSV lines. The TSV lines may be also called “throughelectrodes.”

A data TSV line group 632 which is formed at one memory die 620-p mayinclude TSV lines L1 to Lp, and a parity TSV line group 634 may includeTSV lines L10 to Lq.

The TSV lines L1 to Lp of the data TSV line group 632 and the parity TSVlines L10 to Lq of the parity TSV line group 634 may be connected tomicro bumps MCB which are correspondingly formed among the memory dies620-1 to 620-p.

At least one of the memory dies 620-1 to 620-p may include DRAM cellseach including at least one access transistor and one storage capacitor.

The semiconductor memory device 600 may have a three-dimensional (3D)chip structure or a 2.5D chip structure to communicate with the hostthrough a data bus B10. The buffer die 610 may be connected with thememory controller through the data bus B10.

The via ECC circuit 612 may determine whether a transmission error hasoccurred on the transmission data received through the data TSV linegroup 632, based on the transmission parity bits received through theparity TSV line group 634. When a transmission error is detected, thevia ECC circuit 612 may correct the transmission error on thetransmission data using the transmission parity bits. When thetransmission error is uncorrectable, the via ECC circuit 612 may outputinformation indicating occurrence of an uncorrectable data error.

FIG. 27 is a flow chart illustrating a method of a semiconductor memorydevice according to some example embodiments.

Referring to FIGS. 2 through 27 , in a method of operating asemiconductor memory device including a memory cell array 300 whichincludes a plurality of memory cell rows and each of the plurality ofmemory cell rows includes a plurality of volatile memory cells, a memorycell row may be selected for a scrubbing operation, with the memory cellrow being selected from the plurality of memory cell rows based onrefresh row addresses (operation S210). In some embodiments, thescrubbing control circuit 500 may generate a scrubbing address used forselecting the memory cell row by counting the refresh row addresses.

The ECC circuit 400 performs error detection operation on a plurality ofsub-pages in the selected memory cell row to count a number of erroroccurrences in a first interval of the scrubbing operation (operationS230). The ECC circuit 400 either writes back a corrected codeword orwrites back an uncorrected codeword based on the counted umber of erroroccurrences in a second interval of the scrubbing operation undercontrol of the control logic circuit (operation S250).

The control logic circuit 210 may store a row address of the selectedmemory cell row in the fault address register 580 when the counted umberof error occurrences is equal to or greater than a reference value. Whenan access address associated with a read command is received from asource external to the memory device, it may be compared with the faultaddress register 580. If the access address matches a row fault addressstored in the fault address register 580, the control logic circuit 210may control the ECC circuit 400 to skip an ECC decoding on a memory cellrow designated by the access address.

FIG. 28 is a diagram illustrating a semiconductor package including thestacked memory device, according to some example embodiments.

Referring to FIG. 28 , a semiconductor package 900 may include one ormore stacked memory devices 910 and a graphic processing unit (GPU) 920.The GPU 920 may include a memory controller 925.

The stacked memory devices 910 and the GPU 920 may be mounted on aninterposer 930, and the interposer 930 may be mounted on a packagesubstrate 940. The package substrate 940 may be mounted on solder balls950. The memory controller 925 may employ the memory controller 100 inFIG. 1 .

Each of the stacked memory devices 910 may be implemented in variousforms, and may be a memory device in a high bandwidth memory (HBM) formin which a plurality of layers are stacked. Accordingly, each of thestacked memory devices 910 may include a buffer die and a plurality ofmemory dies. Each of the memory dies may include a memory cell array, anECC circuit, a scrubbing control circuit and a fault address register.

The GPU 920 may communicate with the one or more stacked memory devices910. For example, each of the stacked memory devices 910 and the GPU 920may include a physical region, and communication may be performedbetween each of the stacked memory devices 910 and the GPU 920 throughthe physical regions.

As mentioned above, according to some example embodiments, asemiconductor memory device may include an ECC circuit, a scrubbingcontrol circuit and a fault address register. The ECC circuit performserror detection operation on codewords in a memory cell row designatedby a scrubbing address provided from the scrubbing control circuit tocount a number of error occurrences in a first interval of the scrubbingoperation, and stores a row address of the memory cell row in the faultaddress register as a row fault address when the counted number of erroroccurrences is equal to or greater than the reference value. The ECCcircuit also skips error correction and writes back an uncorrectedcodeword in second interval of the scrubbing operation when the countednumber of error occurrences is equal to or greater than the referencevalue. Therefore, the semiconductor memory device may prevent error bitsfrom being accumulated and may enhance device reliability, credibility,and/or performance.

Some aspects of the present inventive concepts may be applied to systemsusing semiconductor memory devices that employ an ECC circuit. Forexample, some aspects of the present inventive concepts may be appliedto systems such as be a smart phone, a navigation system, a notebookcomputer, a desk top computer and a game console that use thesemiconductor memory device as a working memory.

The foregoing is illustrative of some example embodiments of the presentinventive concepts and is not to be construed as limiting thereof.Although a few example embodiments have been described, those skilled inthe art will readily appreciate that many modifications are possible inthe example embodiments without materially departing from the novelteachings and advantages of the present inventive concepts. Accordingly,all such modifications are intended to be included within the scope ofthe present inventive concept as defined in the claims.

What is claimed is:
 1. A memory device comprising: a memory cell arrayincluding a plurality of memory cells arranged into a plurality ofmemory cell rows, each of the plurality of memory cell rows storing acodeword; a scrubbing control circuit configured to perform a scrubbingoperation on the plurality of memory cells; an error correction code(ECC) circuit configured to read the codeword from at least one of theplurality of memory cell rows and perform an error detection operationon the codeword; and a control logic circuit configured to control theECC circuit to perform a writeback operation or not to perform thewriteback operation on the codeword according to the error detectionoperation in the scrubbing operation.
 2. The memory device of claim 1,wherein the ECC circuit is configured to generate an error generationsignal in the error detection operation, and wherein the control logiccircuit is configured to count a number of error occurrences based onthe error generation signal and determine whether to correct one or moreerrors of the codeword based on comparing the number of erroroccurrences with a reference value.
 3. The memory device of claim 2,wherein the control logic circuit is configured to: based on determiningthat the number of error occurrences is greater than or equal to thereference value, control the ECC circuit to not perform the writebackoperation on the codeword in the scrubbing operation, and based ondetermining that the number of error occurrences is less than thereference value, control the ECC circuit to correct an error of thecodeword, and perform the writeback operation on the codeword in thescrubbing operation.
 4. The memory device of claim 3, wherein thecontrol logic circuit is configured to count the number of erroroccurrences in a first interval of the scrubbing operation and performthe writeback operation on the codeword in a second interval of thescrubbing operation.
 5. The memory device of claim 4, wherein a sum ofthe first interval and the second interval corresponds to an intervalthat is two times a refresh cycle of a memory cell row among theplurality of memory cell rows.
 6. The memory device of claim 2, furthercomprising: a fuse circuit configured to configured to store thereference value and provide the reference value to the control logiccircuit.
 7. The memory device of claim 2, wherein the ECC circuit isfurther configured to provide the error generation signal to the controllogic circuit when the codeword includes at least one error bit as aresult of ECC decoding by the ECC circuit.
 8. The memory device of claim1, further comprising: a fault address register configured to store arow address of the codeword based on determining that the codeword isnot to be corrected.
 9. The memory device of claim 8, wherein thecontrol logic circuit comprises: a command decoder circuit configured toreceive a command including an access address from a memory controller;and an address comparator circuit configured to compare the accessaddress and the row address of the codeword, and provide, to the controllogic circuit, a match signal indicating that the access address and therow address of the codeword match each other.
 10. The memory device ofclaim 9, wherein the control logic circuit is further configured to,based on receiving the match signal from the address comparator circuit,control the ECC circuit to not perform the writeback operation on therow address of the codeword in the scrubbing operation.
 11. The memorydevice of claim 9, wherein the command includes a read command and aread-modify-write command.
 12. The memory device of claim 1, wherein thescrubbing control circuit is configured to perform the scrubbingoperation when a refresh operation is performed on the plurality ofmemory cell rows of the memory cell array.
 13. A memory devicecomprising: a memory cell array including a plurality of memory cellsarranged into a plurality of memory cell rows, each of the plurality ofmemory cell rows storing at least one codeword; a scrubbing controlcircuit configured to perform a scrubbing operation on the plurality ofmemory cells; an error correction code (ECC) circuit configured to reada codeword from a sub-page of at least one of the plurality of memorycell rows, perform an error detection operation on the codeword andgenerate an error generation signal based on the error detectionoperation; and a control logic circuit configured to: count a number oferror occurrences based on the error generation signal; determinewhether to correct one or more errors of the codeword based on comparingthe number of error occurrences with a reference value; and based ondetermining that the number of error occurrences is greater than orequal to the reference value, control the ECC circuit not to perform awriteback operation on the codeword in the scrubbing operation.
 14. Thememory device of claim 13, wherein the control logic circuit is furtherconfigured to, based on determining that the number of error occurrencesis less than the reference value, control the ECC circuit to correct anerror of the codeword, and perform the writeback operation on thecodeword in the scrubbing operation.
 15. The memory device of claim 13,further comprising: a fault address register configured to store a rowaddress of the codeword based on determining that the codeword is not tobe corrected.
 16. The memory device of claim 15, wherein the controllogic circuit comprises: a command decoder circuit configured to receivea command including an access address from a memory controller; and anaddress comparator circuit configured to compare the access address andthe row address of the codeword, and provide, to the control logiccircuit, a match signal indicating that the access address and the rowaddress of the codeword match each other.
 17. The memory device of claim16, wherein the control logic circuit is further configured to, based onreceiving the match signal from the address comparator circuit, controlthe ECC circuit not to perform the writeback operation on the rowaddress of the codeword in the scrubbing operation.
 18. A method ofoperating a memory device including a memory cell array that includes aplurality of memory cells arranged into a plurality of memory cell rows,the method comprising: reading a codeword from at least one of theplurality of memory cell rows; performing an error detection operationon the codeword and generating an error generation signal based on theerror detection operation; counting a number of error occurrences basedon the error generation signal; determining whether to correct one ormore errors of the codeword based on comparing the number of erroroccurrences with a reference value; and controlling an ECC circuit toperform a writeback operation or not to perform the writeback operationduring a scrubbing operation.
 19. The method of claim 18, furthercomprising: based on determining that the number of error occurrences isgreater than or equal to the reference value, controlling the ECCcircuit not to perform the writeback operation on the codeword in thescrubbing operation.
 20. The method of claim 18, further comprising:based on determining that the number of error occurrences is less thanthe reference value, controlling the ECC circuit to correct the error ofthe codeword, and perform the writeback operation on the codeword in thescrubbing operation.